{"created":"2023-05-15T15:27:21.906414+00:00","id":16132,"links":{},"metadata":{"_buckets":{"deposit":"ee5843dc-dc51-44eb-b8dd-a5267e22655c"},"_deposit":{"created_by":3,"id":"16132","owners":[3],"pid":{"revision_id":0,"type":"depid","value":"16132"},"status":"published"},"_oai":{"id":"oai:sucra.repo.nii.ac.jp:00016132","sets":["89:355:518"]},"author_link":["26258","16578"],"item_120_alternative_title_1":{"attribute_name":"タイトル（別言語）","attribute_value_mlt":[{"subitem_alternative_title":"Photoluminescence from Isoelectronic Traps in Dilute Nitride Semiconductor Alloys"}]},"item_120_biblio_info_8":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2006","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"132","bibliographicPageStart":"131","bibliographicVolumeNumber":"39","bibliographic_titles":[{"bibliographic_title":"埼玉大学紀要. 工学部 第1編 第1部 論文集"},{"bibliographic_title":"The Science and Engineering Reports of Saitama University","bibliographic_titleLang":"en"}]}]},"item_120_date_31":{"attribute_name":"作成日","attribute_value_mlt":[{"subitem_date_issued_datetime":"2008-03-19","subitem_date_issued_type":"Created"}]},"item_120_description_19":{"attribute_name":"概要","attribute_value_mlt":[{"subitem_description":"We have studied the photoluminescence from isoelectonic traps in dilute GaAsN alloys. A number of sharp luminescence peaks due to nitrogen pairs and their phonon replicas were observed. The energy differences between the luminescence peaks and phonon replicas were 36 meV, which is in agreement with the energy of the longitudinal optical phonon at the Γ point . This indicates that the formation of isoelectronic traps is largely affected by the conduction band state at the Γ point in dilute GaAsN alloys. We have also investigated the temperature dependence of the photoluminescence related to isoelectronic traps. The energy shift of the luminescence peaks with increasing temperature is found to be almost the same as that of E0 gap of GaAs, also showing that the conduction band state at the Γ point significantly contributes to the formation of isoelectronic traps in dilute GaAsN alloys.","subitem_description_type":"Other"}]},"item_120_description_29":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"subitem_description":"text","subitem_description_type":"Other"}]},"item_120_description_30":{"attribute_name":"フォーマット","attribute_value_mlt":[{"subitem_description":"application/pdf","subitem_description_type":"Other"}]},"item_120_identifier_registration":{"attribute_name":"ID登録","attribute_value_mlt":[{"subitem_identifier_reg_text":"10.24561/00016126","subitem_identifier_reg_type":"JaLC"}]},"item_120_other_language_22":{"attribute_name":"その他の言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_120_publisher_11":{"attribute_name":"出版者名","attribute_value_mlt":[{"subitem_publisher":"埼玉大学工学部"}]},"item_120_publisher_12":{"attribute_name":"出版者名（別言語）","attribute_value_mlt":[{"subitem_publisher":"Faculty of Engineering, Saitama University"}]},"item_120_source_id_14":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"18804446","subitem_source_identifier_type":"ISSN"}]},"item_120_text_27":{"attribute_name":"版","attribute_value_mlt":[{"subitem_text_value":"[出版社版]"}]},"item_120_text_3":{"attribute_name":"著者 ローマ字","attribute_value_mlt":[{"subitem_text_value":"YAGUCHI, Hiroyuki"},{"subitem_text_value":"AOKI, Takashi"}]},"item_120_text_32":{"attribute_name":"アイテムID","attribute_value_mlt":[{"subitem_text_value":"KY-AN00095842-39-23"}]},"item_120_text_4":{"attribute_name":"著者 所属","attribute_value_mlt":[{"subitem_text_value":"埼玉大学大学院理工学研究科数理電子情報部門"}]},"item_120_text_5":{"attribute_name":"著者 所属(別言語)","attribute_value_mlt":[{"subitem_text_value":"Graduate School of Science and Engineering, Saitama University"}]},"item_120_text_9":{"attribute_name":"年月次","attribute_value_mlt":[{"subitem_text_value":"2006-7"}]},"item_120_version_type_28":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"矢口, 裕之"},{"creatorName":"ヤグチ, ヒロユキ","creatorNameLang":"ja-Kana"}],"nameIdentifiers":[{"nameIdentifier":"16578","nameIdentifierScheme":"WEKO"},{"nameIdentifier":"sZUxYNBe","nameIdentifierScheme":"研究者総覧","nameIdentifierURI":"http://s-read.saitama-u.ac.jp/researchers/pages/researcher/sZUxYNBe"}]},{"creatorNames":[{"creatorName":"青木, 貴嗣"},{"creatorName":"アオキ, タカシ","creatorNameLang":"ja-Kana"}],"nameIdentifiers":[{"nameIdentifier":"26258","nameIdentifierScheme":"WEKO"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2018-01-24"}],"displaytype":"detail","filename":"KY-AN00095842-39-23.pdf","filesize":[{"value":"269.1 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"KY-AN00095842-39-23.pdf","url":"https://sucra.repo.nii.ac.jp/record/16132/files/KY-AN00095842-39-23.pdf"},"version_id":"d77a4250-52e0-4a15-b6d8-e90a5e4e05db"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"isoelectronic trap","subitem_subject_scheme":"Other"},{"subitem_subject":"dilute nitride semiconductor alloy","subitem_subject_scheme":"Other"},{"subitem_subject":"photoluminescence","subitem_subject_scheme":"Other"},{"subitem_subject":"GaAsN","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"departmental bulletin paper","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"極低窒素濃度化合物半導体混晶におけるアイソエレクトロニックトラップによる発光に関する研究<研究成果報告>","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"極低窒素濃度化合物半導体混晶におけるアイソエレクトロニックトラップによる発光に関する研究<研究成果報告>"}]},"item_type_id":"120","owner":"3","path":["518"],"pubdate":{"attribute_name":"公開日","attribute_value":"2008-03-21"},"publish_date":"2008-03-21","publish_status":"0","recid":"16132","relation_version_is_last":true,"title":["極低窒素濃度化合物半導体混晶におけるアイソエレクトロニックトラップによる発光に関する研究<研究成果報告>"],"weko_creator_id":"3","weko_shared_id":-1},"updated":"2023-05-15T18:51:38.986642+00:00"}