@article{oai:sucra.repo.nii.ac.jp:00016454,
 author = {土方, 泰斗 and 矢口, 裕之 and 吉田, 貞史},
 journal = {埼玉大学工学部紀要 第一部 論文集},
 month = {},
 note = {To understand the structure of SiC-oxide interface more in detail, we propose a theory for calculating the depth profiles of Si and C emitted into SiC layer during oxidation. Simulations of the depth profiles of Si and C interstitials results in the structures analogous with those observed from a spectroscopic ellipsometry. To determine the diffusivities of Si and C interstitials, we performed capacitance-voltage measurements for examining the re-distribution profiles of nitrogen after oxidation. By comparing between observed and calculated profile, we obtained the self-diffusivity of C interstitials and confirmed that the proposed theory was appropriate to estimate depth profiles of Si and C interstitials emitted into SiC layer., text, application/pdf},
 pages = {34--37},
 title = {酸化中のSi及びC原子のSiC層への放出現象における理論的検討＜研究成果報告＞},
 volume = {44},
 year = {2013},
 yomi = {ヒジカタ, ヤスト and ヤグチ, ヒロユキ and ヨシダ, サダフミ}
}