{"created":"2023-05-15T15:27:35.446455+00:00","id":16454,"links":{},"metadata":{"_buckets":{"deposit":"fb270dd5-0d06-43f7-8fac-4e17659c0868"},"_deposit":{"created_by":3,"id":"16454","owners":[3],"pid":{"revision_id":0,"type":"depid","value":"16454"},"status":"published"},"_oai":{"id":"oai:sucra.repo.nii.ac.jp:00016454","sets":["89:355:523"]},"author_link":["18434","16578","26644"],"item_120_alternative_title_1":{"attribute_name":"タイトル（別言語）","attribute_value_mlt":[{"subitem_alternative_title":"Theoretical studies for Si and C emission into SiC layer during oxidation"}]},"item_120_biblio_info_8":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2013","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"37","bibliographicPageStart":"34","bibliographicVolumeNumber":"44","bibliographic_titles":[{"bibliographic_title":"埼玉大学工学部紀要 第一部 論文集"}]}]},"item_120_date_31":{"attribute_name":"作成日","attribute_value_mlt":[{"subitem_date_issued_datetime":"2014-02-24","subitem_date_issued_type":"Created"}]},"item_120_description_19":{"attribute_name":"概要","attribute_value_mlt":[{"subitem_description":"To understand the structure of SiC-oxide interface more in detail, we propose a theory for calculating the depth profiles of Si and C emitted into SiC layer during oxidation. Simulations of the depth profiles of Si and C interstitials results in the structures analogous with those observed from a spectroscopic ellipsometry. To determine the diffusivities of Si and C interstitials, we performed capacitance-voltage measurements for examining the re-distribution profiles of nitrogen after oxidation. By comparing between observed and calculated profile, we obtained the self-diffusivity of C interstitials and confirmed that the proposed theory was appropriate to estimate depth profiles of Si and C interstitials emitted into SiC layer.","subitem_description_type":"Other"}]},"item_120_description_29":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"subitem_description":"text","subitem_description_type":"Other"}]},"item_120_description_30":{"attribute_name":"フォーマット","attribute_value_mlt":[{"subitem_description":"application/pdf","subitem_description_type":"Other"}]},"item_120_publisher_11":{"attribute_name":"出版者名","attribute_value_mlt":[{"subitem_publisher":"埼玉大学工学部広報委員会"}]},"item_120_source_id_14":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"18804446","subitem_source_identifier_type":"ISSN"}]},"item_120_text_27":{"attribute_name":"版","attribute_value_mlt":[{"subitem_text_value":"[出版社版]"}]},"item_120_text_3":{"attribute_name":"著者 ローマ字","attribute_value_mlt":[{"subitem_text_value":"HIJIKATA, Yasuto"},{"subitem_text_value":"YAGUCHI, Hiroyuki"},{"subitem_text_value":"YOSHIDA, Sadafumi"}]},"item_120_text_32":{"attribute_name":"アイテムID","attribute_value_mlt":[{"subitem_text_value":"KY-AN00095842-44-09"}]},"item_120_text_4":{"attribute_name":"著者 所属","attribute_value_mlt":[{"subitem_text_value":"埼玉大学大学院理工学研究科数理電子情報部門"},{"subitem_text_value":"埼玉大学大学院理工学研究科数理電子情報部門"},{"subitem_text_value":"産業技術総合研究所 先進パワーエレクトロニクス研究センター"}]},"item_120_text_5":{"attribute_name":"著者 所属(別言語)","attribute_value_mlt":[{"subitem_text_value":"Division of Mathematics Electronics and Informatics, Graduate School of Science and Engineering, Saitama University"},{"subitem_text_value":"Division of Mathematics Electronics and Informatics, Graduate School of Science and Engineering, Saitama University"},{"subitem_text_value":"Advanced Power Electronics Research Center, AIST"}]},"item_120_text_9":{"attribute_name":"年月次","attribute_value_mlt":[{"subitem_text_value":"2010"}]},"item_120_version_type_28":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"土方, 泰斗"},{"creatorName":"ヒジカタ, ヤスト","creatorNameLang":"ja-Kana"}],"nameIdentifiers":[{},{}]},{"creatorNames":[{"creatorName":"矢口, 裕之"},{"creatorName":"ヤグチ, ヒロユキ","creatorNameLang":"ja-Kana"}],"nameIdentifiers":[{},{}]},{"creatorNames":[{"creatorName":"吉田, 貞史"},{"creatorName":"ヨシダ, サダフミ","creatorNameLang":"ja-Kana"}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2018-01-24"}],"displaytype":"detail","filename":"KY-AN00095842-44-09.pdf","filesize":[{"value":"617.5 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"KY-AN00095842-44-09.pdf","url":"https://sucra.repo.nii.ac.jp/record/16454/files/KY-AN00095842-44-09.pdf"},"version_id":"aa003ec0-427f-4949-83a5-78b4e836ddf5"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"oxidation","subitem_subject_scheme":"Other"},{"subitem_subject":"MOS structure","subitem_subject_scheme":"Other"},{"subitem_subject":"SiC-oxide interface","subitem_subject_scheme":"Other"},{"subitem_subject":"Si and C emission","subitem_subject_scheme":"Other"},{"subitem_subject":"interstitial","subitem_subject_scheme":"Other"},{"subitem_subject":"diffusivity","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"departmental bulletin paper","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"酸化中のSi及びC原子のSiC層への放出現象における理論的検討＜研究成果報告＞","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"酸化中のSi及びC原子のSiC層への放出現象における理論的検討＜研究成果報告＞"}]},"item_type_id":"120","owner":"3","path":["523"],"pubdate":{"attribute_name":"公開日","attribute_value":"2014-02-24"},"publish_date":"2014-02-24","publish_status":"0","recid":"16454","relation_version_is_last":true,"title":["酸化中のSi及びC原子のSiC層への放出現象における理論的検討＜研究成果報告＞"],"weko_creator_id":"3","weko_shared_id":-1},"updated":"2023-05-16T09:44:42.275101+00:00"}