@article{oai:sucra.repo.nii.ac.jp:00016477,
 author = {太田, 直希 and 春田, 浩司 and 清水, 宏一 and 小林, 知洋 and 白井, 肇},
 journal = {埼玉大学地域オープンイノベーションセンター紀要, Report of Comprehensive Open Innovation Center, Saitama University},
 month = {},
 note = {Crystallization mechanism of hydrogenated amorphous silicon (a-Si:H) by using the atmospheric pressure radio-frequency thermal plasma jet (AP-TPJ) is discussed through the real time monitoring of the surface temperature, optical transmittance, and reflectance profiles. The film crystallization proceeds through the three steps, i.e., dehydrogenation, solid phase crystallization (SPC) and subsequent coalescence of small crystalline grains. The SPC occurs at 750°C, which was almost independent of the rising speed of surface temperature. However, the coalescence stage depended on the surface temperature profile and the maximum surface temperature, which determined the average crystalline grain size., text, application/pdf},
 pages = {41--48},
 title = {大気圧熱プラズマジェットによる a-Si 相変化の実時間計測},
 volume = {1},
 year = {2009},
 yomi = {シライ, ハジメ}
}