@article{oai:sucra.repo.nii.ac.jp:00016531,
 author = {森, 涼太郎 and 高橋, 幸郎 and 大澤, 光明},
 journal = {埼玉大学地域オープンイノベーションセンター紀要, Report of Comprehensive Open Innovation Center, Saitama University},
 month = {},
 note = {High-resolution proximity exposure (mask alignment) system for semiconductor micro fabrication has been developed and evaluated. A novel exposure system has laser displacement meter for high-precision measurement of the gap between the mask and the wafer. The repeatability error of the displacement meter was 0.025μm. The exposure system also contains highly collimated UV source. The illumination intensity uniformity was within 5% and the main wavelength was 365nm. The resolution of the system was 3 μm in proximity exposure (gap: 10 μm) and 1.5 μm in contact exposure., text, application/pdf},
 pages = {61--63},
 title = {高精度非接触式等倍露光(マスクアライメント)装置の性能評価},
 volume = {2},
 year = {2010},
 yomi = {モリ, リョウタロウ and タカハシ, コウロウ and オオサワ, ミツアキ}
}