@article{oai:sucra.repo.nii.ac.jp:00016575,
 author = {吉田, 貞史 and 矢口, 裕之 and 土方, 泰斗 and 折原, 操},
 journal = {埼玉大学地域共同研究センター紀要, Report of Cooperative Research Center, Saitama University},
 month = {},
 note = {The characterization of thermally oxidized films on SiC and oxide/SiC interfaces has been carried out by use of spectroscopic ellipsometry, comparing with the oxide films on Si and low-temperature CVD oxide films. We have, for the first time, proposed the measurements of optical properties of oxide films as a function of oxide thickness using one sample with angled
etched oxide film on SiC. From the ellipsometric measurements, it was found that the apparent refractive indices decrease with decreasing oxide film thickness. These behavior can be
explained by the model that there exist interface layer, about 1 nm in thickness, with higher refractive index than those of SiC and Si0 2 and the thickness of Si0 2 layers on the interface layer increases with oxide film thickness. This result suggests that there exist thin interface layers with high refractive indices between Si02 layers and SiC substrates. We have also measured atomic composition and chemical bonding in oxide films on SiC by AES and XPS, and have shown the changes in the composition and bonding nature at the interfaces. We have developed the measurement method of thickness of homoepitaxially grown films on SiC by use of micro FT-IR, and have demonstrated the thickness mapping of 2 inch diameter 6H-SiC epilayers., text, application/pdf},
 pages = {25--32},
 title = {分光偏光解析等によるSiC酸化膜の評価 <研究報告>},
 volume = {1},
 year = {2001}
}