@article{oai:sucra.repo.nii.ac.jp:00016630,
 author = {富永, 茂 and 榊原, 晋 and 土肥, 俊郎},
 journal = {埼玉大学地域共同研究センター紀要, Report of Cooperative Research Center, Saitama University},
 month = {},
 note = {Anew fixed abrasive-type Polishing Pad for CMP of semiconductor device oxide layer like as lLD and STI is examined. The new type polishing pad is composed two thin layers which are a Ceria fixed abrasive and polymer layer, arranged in a line alternatively, and kept in a vertical position to the pad surface.
The examined polishing pads are made from three kinds of polymer, Acrylic esters, Polyurethane, Polystyrene selected as a material for a binder of the fixed abrasive layer and the polymer layer. The pad combined Acrylic esters for binder of fixed abrasive layer and Polyurethane for polymer layer shows the highest material removal rate(M.R.R). Applying to diluted Ceria slurry for oxide layer CMP, the examined pad shows much higher M.M.R. than ordinary Foamed Polyurethane Pad. The new fixed abrasive-type polishing pad is possible to reduce amount of Ceria slurry to 1/3〜1/5.
We discuss the polishing mechanism applying the new fixed abrasive-type polishing pad at the viewpoint of the relationship between M.M.R. and concentration of extricated Ceria abrasive upon a pad, then conclude that M. M. R. does not have an effect on fixed abrasive on pad, but on extricated abrasive from the pad., text, application/pdf},
 pages = {90--95},
 title = {新しいCMP用固定砥粒形ポリシングパッドの開発研究},
 volume = {2},
 year = {2002}
}