{"created":"2023-05-15T15:27:43.499209+00:00","id":16644,"links":{},"metadata":{"_buckets":{"deposit":"069d3c1a-d4ce-4197-bdda-7a59be16f359"},"_deposit":{"created_by":3,"id":"16644","owners":[3],"pid":{"revision_id":0,"type":"depid","value":"16644"},"status":"published"},"_oai":{"id":"oai:sucra.repo.nii.ac.jp:00016644","sets":["95:239:634"]},"author_link":["18434","27135","16578","27134"],"item_120_alternative_title_1":{"attribute_name":"タイトル（別言語）","attribute_value_mlt":[{"subitem_alternative_title":"Characterization of Oxide Films on SiC by Spectroscopic Ellipsometry"}]},"item_120_biblio_info_8":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2002","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"156","bibliographicPageStart":"150","bibliographicVolumeNumber":"2","bibliographic_titles":[{"bibliographic_title":"埼玉大学地域共同研究センター紀要"},{"bibliographic_title":"Report of Cooperative Research Center, Saitama University","bibliographic_titleLang":"en"}]}]},"item_120_date_31":{"attribute_name":"作成日","attribute_value_mlt":[{"subitem_date_issued_datetime":"2009-06-24","subitem_date_issued_type":"Created"}]},"item_120_description_19":{"attribute_name":"概要","attribute_value_mlt":[{"subitem_description":"The characterization of oxidized films on SiC and oxide/SiC interfaces has been carried out by use of spectroscopic ellipsometry and XPS in order to make clear their dependences on the oxidation process. It was found that the refractive indices of the interfaces depend both on the oxide formation method and the method of post oxidation annealing. We found that the refractive indices for the oxide films deposited by low temperature CVD have lower interface refractive indices than those for dry oxidation and pyrogenic oxidation, and those for post oxidation annealed in· Ar atmosphere are lower that those for quenched samples. These results correspond well with the tendencies of interface state densities obtained by electrical measurements for the samples with the corresponding oxidation processes, except the cases of the oxidation processes containing hydrogen orland hydro-oxide base, like pyrogenic oxidation and wet re-oxidation. The XPS measurements have also shown the changes in the composition and bonding nature at the interfaces by the oxidation processes. We have shown the capability of microscopic FT -IR measurements for obtaining carrier density and mobility mapping of bulk SiC wafers.","subitem_description_type":"Other"}]},"item_120_description_29":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"subitem_description":"text","subitem_description_type":"Other"}]},"item_120_description_30":{"attribute_name":"フォーマット","attribute_value_mlt":[{"subitem_description":"application/pdf","subitem_description_type":"Other"}]},"item_120_identifier_registration":{"attribute_name":"ID登録","attribute_value_mlt":[{"subitem_identifier_reg_text":"10.24561/00016638","subitem_identifier_reg_type":"JaLC"}]},"item_120_other_language_22":{"attribute_name":"その他の言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_120_publisher_11":{"attribute_name":"出版者名","attribute_value_mlt":[{"subitem_publisher":"埼玉大学地域共同研究センター"}]},"item_120_source_id_14":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"13474758","subitem_source_identifier_type":"ISSN"}]},"item_120_text_3":{"attribute_name":"著者 ローマ字","attribute_value_mlt":[{"subitem_text_value":"Yoshida, Sadafumi"},{"subitem_text_value":"Yaguchi, Hiroyuki"},{"subitem_text_value":"Hijikata, Yasuto"},{"subitem_text_value":"Orihara, Misao"}]},"item_120_text_32":{"attribute_name":"アイテムID","attribute_value_mlt":[{"subitem_text_value":"KY-AA11808968-02-38"}]},"item_120_text_4":{"attribute_name":"著者 所属","attribute_value_mlt":[{"subitem_text_value":"埼玉大学工学部電気電子システム工学科"},{"subitem_text_value":"埼玉大学工学部電気電子システム工学科"},{"subitem_text_value":"埼玉大学工学部電気電子システム工学科"}]},"item_120_text_5":{"attribute_name":"著者 所属(別言語)","attribute_value_mlt":[{"subitem_text_value":"Department of Electric and Electronic Systems Engineering, Faculty of Engineering, Saitama University"},{"subitem_text_value":"Department of Electric and Electronic Systems Engineering, Faculty of Engineering, Saitama University"},{"subitem_text_value":"Department of Electric and Electronic Systems Engineering, Faculty of Engineering, Saitama University"}]},"item_120_text_9":{"attribute_name":"年月次","attribute_value_mlt":[{"subitem_text_value":"2001"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"吉田, 貞史"},{"creatorName":"ヨシダ, サダフミ","creatorNameLang":"ja-Kana"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"矢口, 裕之"},{"creatorName":"ヤグチ, ヒロユキ","creatorNameLang":"ja-Kana"}],"nameIdentifiers":[{},{}]},{"creatorNames":[{"creatorName":"土方, 泰斗"},{"creatorName":"ヒジカタ, ヤスト","creatorNameLang":"ja-Kana"}],"nameIdentifiers":[{},{}]},{"creatorNames":[{"creatorName":"折原, 操"},{"creatorName":"オリハラ, ミサオ","creatorNameLang":"ja-Kana"}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2018-01-24"}],"displaytype":"detail","filename":"KY-AA11808968-02-38.pdf","filesize":[{"value":"415.3 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"KY-AA11808968-02-38.pdf","url":"https://sucra.repo.nii.ac.jp/record/16644/files/KY-AA11808968-02-38.pdf"},"version_id":"b9dfabb2-e1d3-4881-bdc7-25c3ef50271b"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"SiC","subitem_subject_scheme":"Other"},{"subitem_subject":"oxide/SiC Interface","subitem_subject_scheme":"Other"},{"subitem_subject":"spectroscopic ellipsometry","subitem_subject_scheme":"Other"},{"subitem_subject":"XPS","subitem_subject_scheme":"Other"},{"subitem_subject":"FT-IR","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"departmental bulletin paper","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"分光偏光解析等によるSiC酸化膜の評価","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"分光偏光解析等によるSiC酸化膜の評価"}]},"item_type_id":"120","owner":"3","path":["634"],"pubdate":{"attribute_name":"公開日","attribute_value":"2009-06-24"},"publish_date":"2009-06-24","publish_status":"0","recid":"16644","relation_version_is_last":true,"title":["分光偏光解析等によるSiC酸化膜の評価"],"weko_creator_id":"3","weko_shared_id":-1},"updated":"2023-05-15T18:16:41.391559+00:00"}