@article{oai:sucra.repo.nii.ac.jp:00016648,
 author = {代田, 渉 and 榊原, 晋 and 富永, 茂 and 土肥, 俊郎},
 journal = {埼玉大学地域共同研究センター紀要, Report of Cooperative Research Center, Saitama University},
 month = {},
 note = {Semi-dry polishing method for silicon oxide wafer CMP with Spiral type Fixed Ceria Abrasive polishing pad is proposed in this paper. High MRR of 400nm/min and high WIWNU of 8% are obtained by this method.
Semi-dry pol ishing method is one of the method of slurry free CMP and is the new method using small amount of pure water instead of slurry and chemical liquid. Key technique of this method is how to control the amount of pure water on the pad surface before pol ishing. Control technique is examined, and polishing mechanism is discussed., text, application/pdf},
 pages = {14--20},
 title = {新しい固定砥粒パッドによるのセミドライ加工方法の研究},
 volume = {3},
 year = {2003}
}