@article{oai:sucra.repo.nii.ac.jp:00016649,
 author = {PACAUD, PACAUDB. and 土肥, 俊郎 and UEKI, Y. and SASAKAWA, Y. and ROHART, E.},
 journal = {埼玉大学地域共同研究センター紀要, Report of Cooperative Research Center, Saitama University},
 month = {},
 note = {ceria(CeO2) slurry has a strong merit in CMP polishing to give a high removal rate and is more and more used. Polishing efficiency such as removal rate must depend essentially on intrinsic properties ofSi02powder .In the present study we investigated the polishing properties and sbmy stability 00 new powders which have been tuned at during synthesis to increase their polishing efficiency. We investigated those properties in the range of pH of 3 to 10 and compared performances to commercial slwries. We could get with the best powder a removal rate 1.5times superior to ceria commercial sluny and 8 times higher than silica commercial sluny. However those 3 powders proved not to have so good sedimentation stability at pH of 7. This should be solved by tuning the formulation by addition of appropriate surfactant, text, application/pdf},
 pages = {21--24},
 title = {NEW CERIUM POWDERS FOR OXIDE FILM PLANARIZATION-CMP},
 volume = {3},
 year = {2003}
}