{"created":"2023-05-15T15:27:44.256717+00:00","id":16662,"links":{},"metadata":{"_buckets":{"deposit":"6cf8b401-a18c-49a0-9a89-98700c33f2ee"},"_deposit":{"created_by":3,"id":"16662","owners":[3],"pid":{"revision_id":0,"type":"depid","value":"16662"},"status":"published"},"_oai":{"id":"oai:sucra.repo.nii.ac.jp:00016662","sets":["95:239:635"]},"author_link":["18434","27177","16578","27176"],"item_120_alternative_title_1":{"attribute_name":"タイトル（別言語）","attribute_value_mlt":[{"subitem_alternative_title":"Characterization of Oxide Films on SiC by Spectroscopic Ellipsometry"}]},"item_120_biblio_info_8":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2003","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"48","bibliographicPageStart":"41","bibliographicVolumeNumber":"3","bibliographic_titles":[{"bibliographic_title":"埼玉大学地域共同研究センター紀要"},{"bibliographic_title":"Report of Cooperative Research Center, Saitama University","bibliographic_titleLang":"en"}]}]},"item_120_date_31":{"attribute_name":"作成日","attribute_value_mlt":[{"subitem_date_issued_datetime":"2009-06-25","subitem_date_issued_type":"Created"}]},"item_120_description_19":{"attribute_name":"概要","attribute_value_mlt":[{"subitem_description":"We have developed the method of obtaining the refractive indices of SiC/oxide interfaces by use of spectroscopic ellipsometry, and by using this method we have characterized SiC/oxide interfaces obtained by various oxidation methods and/or post oxidation annealing (POA). We have designed and fabricated the system with which in situ spectroscopic ellipsometry measurements can be carried out. We have observed the initial oxidation stage of SiC. We have also observed the changes of the refractive indices of interfaces by annealing in Ar atmosphere (Ar POA). The changes of atomic bond states at the interface by Ar POA were also observed by angle-resolved XPS and UPS, and compared with the results obtained form optical measurements and C-V measurements. We have developed the measurement method of obtaining carrier density and mobility distribution in SiC wafers by use of microscopic FT-IR. We have shown that the values obtained by this method well agree with those obtained from Hall measurements, suggesting that the method is useful to characterize electrical properties of SiC wafers quantitatively, non-destructively and without contact.","subitem_description_type":"Other"}]},"item_120_description_29":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"subitem_description":"text","subitem_description_type":"Other"}]},"item_120_description_30":{"attribute_name":"フォーマット","attribute_value_mlt":[{"subitem_description":"application/pdf","subitem_description_type":"Other"}]},"item_120_identifier_registration":{"attribute_name":"ID登録","attribute_value_mlt":[{"subitem_identifier_reg_text":"10.24561/00016656","subitem_identifier_reg_type":"JaLC"}]},"item_120_publisher_11":{"attribute_name":"出版者名","attribute_value_mlt":[{"subitem_publisher":"埼玉大学地域共同研究センター"}]},"item_120_source_id_14":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"13474758","subitem_source_identifier_type":"ISSN"}]},"item_120_text_3":{"attribute_name":"著者 ローマ字","attribute_value_mlt":[{"subitem_text_value":"Sadafumi Yoshida"},{"subitem_text_value":"Hiroyuki Yaguchi"},{"subitem_text_value":"Yasuto Hijikata"},{"subitem_text_value":"Misao Orihara"}]},"item_120_text_32":{"attribute_name":"アイテムID","attribute_value_mlt":[{"subitem_text_value":"KY-AA11808968-03-18"}]},"item_120_text_4":{"attribute_name":"著者 所属","attribute_value_mlt":[{"subitem_text_value":"埼玉大学工学部電気電子システム工学科"},{"subitem_text_value":"埼玉大学工学部電気電子システム工学科"},{"subitem_text_value":"埼玉大学工学部電気電子システム工学科"},{"subitem_text_value":"埼玉大学工学部電気電子システム工学科"}]},"item_120_text_5":{"attribute_name":"著者 所属(別言語)","attribute_value_mlt":[{"subitem_text_value":"Department ofElectric and Electronic Systems Engineering, Faculty of Engineering, Saitama University"},{"subitem_text_value":"Department ofElectric and Electronic Systems Engineering, Faculty of Engineering, Saitama University"},{"subitem_text_value":"Department ofElectric and Electronic Systems Engineering, Faculty of Engineering, Saitama University"},{"subitem_text_value":"Department ofElectric and Electronic Systems Engineering, Faculty of Engineering, Saitama University"}]},"item_120_text_9":{"attribute_name":"年月次","attribute_value_mlt":[{"subitem_text_value":"2002"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"吉田, 貞史"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"矢口, 裕之"}],"nameIdentifiers":[{},{}]},{"creatorNames":[{"creatorName":"土方, 泰斗"}],"nameIdentifiers":[{},{}]},{"creatorNames":[{"creatorName":"折原, 操"}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2018-01-24"}],"displaytype":"detail","filename":"KY-AA11808968-03-18.pdf","filesize":[{"value":"501.0 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"KY-AA11808968-03-18.pdf","url":"https://sucra.repo.nii.ac.jp/record/16662/files/KY-AA11808968-03-18.pdf"},"version_id":"3878b5bf-4a16-4688-9296-82692dfd422c"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"SiC","subitem_subject_scheme":"Other"},{"subitem_subject":"oxide/SiC Interface","subitem_subject_scheme":"Other"},{"subitem_subject":"spectroscopic ellipsometry","subitem_subject_scheme":"Other"},{"subitem_subject":"AR-XPS","subitem_subject_scheme":"Other"},{"subitem_subject":"UPS","subitem_subject_scheme":"Other"},{"subitem_subject":"C-V","subitem_subject_scheme":"Other"},{"subitem_subject":"FT-IR","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"departmental bulletin paper","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"分光偏光解析等によるSiC酸化膜の評価","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"分光偏光解析等によるSiC酸化膜の評価"}]},"item_type_id":"120","owner":"3","path":["635"],"pubdate":{"attribute_name":"公開日","attribute_value":"2009-05-21"},"publish_date":"2009-05-21","publish_status":"0","recid":"16662","relation_version_is_last":true,"title":["分光偏光解析等によるSiC酸化膜の評価"],"weko_creator_id":"3","weko_shared_id":-1},"updated":"2023-05-15T18:14:12.403714+00:00"}