@article{oai:sucra.repo.nii.ac.jp:00016702,
 author = {吉田, 貞史 and 矢口, 裕之 and 土方, 泰斗 and 折原, 操},
 journal = {埼玉大学地域共同研究センター紀要, Report of Cooperative Research Center, Saitama Univerity},
 month = {},
 note = {We have grown InN films on 3C-SiC (001) substrates with and without cubic GaN underlayers by RF-MBE. It was found that, in the case of direct growth on 3C-SiC (001), hexagonal InN grows with the crystal orientation as hexagonal InN　[1-100]//3C-SiC [110], while, in the case of the growth on cubic GaN underlayers, cubic InN grows with the crystal orientation as cubic InN [110]//cubic GaN [110]. Photoluminescence emissions from the cubic and hexagonal InN films were clearly observed at around 0.7 eV., text, application/pdf},
 pages = {61--64},
 title = {RF-MBE法を用いた六方晶および立方晶InNのエピタキシャル成長},
 volume = {4},
 year = {2004},
 yomi = {ヨシダ, サダフミ and ヤグチ, ヒロユキ and ヒジカタ, ヤスオ and オリハラ, ミサオ}
}