{"created":"2023-05-15T15:27:45.932924+00:00","id":16702,"links":{},"metadata":{"_buckets":{"deposit":"4e2f47af-0e5b-477a-883c-b1af36400130"},"_deposit":{"created_by":3,"id":"16702","owners":[3],"pid":{"revision_id":0,"type":"depid","value":"16702"},"status":"published"},"_oai":{"id":"oai:sucra.repo.nii.ac.jp:00016702","sets":["95:239:636"]},"author_link":["18434","16578","27286","27285"],"item_120_alternative_title_1":{"attribute_name":"タイトル（別言語）","attribute_value_mlt":[{"subitem_alternative_title":"Epitaxial Growth of hexagonal and cubic InN using RF-MBE"}]},"item_120_biblio_info_8":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2004","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"64","bibliographicPageStart":"61","bibliographicVolumeNumber":"4","bibliographic_titles":[{"bibliographic_title":"埼玉大学地域共同研究センター紀要"},{"bibliographic_title":"Report of Cooperative Research Center, Saitama Univerity","bibliographic_titleLang":"en"}]}]},"item_120_date_31":{"attribute_name":"作成日","attribute_value_mlt":[{"subitem_date_issued_datetime":"2009-06-17","subitem_date_issued_type":"Created"}]},"item_120_description_19":{"attribute_name":"概要","attribute_value_mlt":[{"subitem_description":"We have grown InN films on 3C-SiC (001) substrates with and without cubic GaN underlayers by RF-MBE. It was found that, in the case of direct growth on 3C-SiC (001), hexagonal InN grows with the crystal orientation as hexagonal InN　[1-100]//3C-SiC [110], while, in the case of the growth on cubic GaN underlayers, cubic InN grows with the crystal orientation as cubic InN [110]//cubic GaN [110]. Photoluminescence emissions from the cubic and hexagonal InN films were clearly observed at around 0.7 eV.","subitem_description_type":"Other"}]},"item_120_description_29":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"subitem_description":"text","subitem_description_type":"Other"}]},"item_120_description_30":{"attribute_name":"フォーマット","attribute_value_mlt":[{"subitem_description":"application/pdf","subitem_description_type":"Other"}]},"item_120_identifier_registration":{"attribute_name":"ID登録","attribute_value_mlt":[{"subitem_identifier_reg_text":"10.24561/00016696","subitem_identifier_reg_type":"JaLC"}]},"item_120_publisher_11":{"attribute_name":"出版者名","attribute_value_mlt":[{"subitem_publisher":"埼玉大学地域共同研究センター"}]},"item_120_source_id_14":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"13474758","subitem_source_identifier_type":"ISSN"}]},"item_120_text_3":{"attribute_name":"著者 ローマ字","attribute_value_mlt":[{"subitem_text_value":"Yoshida, Sadafumi"},{"subitem_text_value":"Yaguchi, Hiroyuki"},{"subitem_text_value":"Hijikata, Yasuto"},{"subitem_text_value":"Orihara, Misao"}]},"item_120_text_32":{"attribute_name":"アイテムID","attribute_value_mlt":[{"subitem_text_value":"KY-AA11808968-04-15"}]},"item_120_text_4":{"attribute_name":"著者 所属","attribute_value_mlt":[{"subitem_text_value":"埼玉大学工学部電気電子システム工学科"},{"subitem_text_value":"埼玉大学工学部電気電子システム工学科"},{"subitem_text_value":"埼玉大学工学部電気電子システム工学科"},{"subitem_text_value":"埼玉大学工学部電気電子システム工学科"}]},"item_120_text_5":{"attribute_name":"著者 所属(別言語)","attribute_value_mlt":[{"subitem_text_value":"Department of Electrical and Electronic Systems, Faculty of Engineering, Saitama University"},{"subitem_text_value":"Department of Electrical and Electronic Systems, Faculty of Engineering, Saitama University"},{"subitem_text_value":"Department of Electrical and Electronic Systems, Faculty of Engineering, Saitama University"},{"subitem_text_value":"Department of Electrical and Electronic Systems, Faculty of Engineering, Saitama University"}]},"item_120_text_9":{"attribute_name":"年月次","attribute_value_mlt":[{"subitem_text_value":"2003"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"吉田, 貞史"},{"creatorName":"ヨシダ, サダフミ","creatorNameLang":"ja-Kana"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"矢口, 裕之"},{"creatorName":"ヤグチ, ヒロユキ","creatorNameLang":"ja-Kana"}],"nameIdentifiers":[{},{}]},{"creatorNames":[{"creatorName":"土方, 泰斗"},{"creatorName":"ヒジカタ, ヤスオ","creatorNameLang":"ja-Kana"}],"nameIdentifiers":[{},{}]},{"creatorNames":[{"creatorName":"折原, 操"},{"creatorName":"オリハラ, ミサオ","creatorNameLang":"ja-Kana"}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2018-01-24"}],"displaytype":"detail","filename":"KY-AA11808968-04-15.pdf","filesize":[{"value":"197.9 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"KY-AA11808968-04-15.pdf","url":"https://sucra.repo.nii.ac.jp/record/16702/files/KY-AA11808968-04-15.pdf"},"version_id":"db65da44-7004-41fa-9a2c-18041867e59e"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"InN","subitem_subject_scheme":"Other"},{"subitem_subject":"hexagonal","subitem_subject_scheme":"Other"},{"subitem_subject":"cubic","subitem_subject_scheme":"Other"},{"subitem_subject":"RF-MBE","subitem_subject_scheme":"Other"},{"subitem_subject":"3C-SiC","subitem_subject_scheme":"Other"},{"subitem_subject":"GaN","subitem_subject_scheme":"Other"},{"subitem_subject":"x-ray diffraction","subitem_subject_scheme":"Other"},{"subitem_subject":"photoluminescence","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"departmental bulletin paper","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"RF-MBE法を用いた六方晶および立方晶InNのエピタキシャル成長","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"RF-MBE法を用いた六方晶および立方晶InNのエピタキシャル成長"}]},"item_type_id":"120","owner":"3","path":["636"],"pubdate":{"attribute_name":"公開日","attribute_value":"2009-05-14"},"publish_date":"2009-05-14","publish_status":"0","recid":"16702","relation_version_is_last":true,"title":["RF-MBE法を用いた六方晶および立方晶InNのエピタキシャル成長"],"weko_creator_id":"3","weko_shared_id":-1},"updated":"2023-05-15T18:12:30.579491+00:00"}