@article{oai:sucra.repo.nii.ac.jp:00016773,
 author = {浅山, 三夫 and 石川, 雄三 and 広瀬, 健吾 and 小林, 信一 and 山納, 康},
 journal = {埼玉大学地域共同研究センター紀要, Report of Cooperative Research Center, Saitama University},
 month = {},
 note = {We are continuing to develop high voltage etching fuse for protecting semiconductors. Last year fundamental researches to find etching patterns bringing better current breaking capability were conducted, and successfully completed. This year 7.2kV rating etching fuse was developed based on the results of fundamental researches of last year. It was confirmed that this type of etching fuse has good breaking performance and smaller I2t value compared with target value were obtained.
Therefore it will be possible to produce a high voltage etching fuse for protecting semiconductors having lower I2t than those of current products., text, application/pdf},
 pages = {67--70},
 title = {高圧半導体保護用エッチングヒューズの開発(続）},
 volume = {6},
 year = {2006},
 yomi = {アサヤマ, ミツオ and イシカワ, ユウゾウ and ヒロセ, ケンゴ and コバヤシ, シンイチ and ヤマノウ, ヤスシ}
}