@article{oai:sucra.repo.nii.ac.jp:00016787,
 author = {中原, 良彦 and 土肥, 俊郎},
 journal = {埼玉大学地域共同研究センター紀要, Report of Cooperative Research Center, Saitama University},
 month = {},
 note = {We developed an advanced Chemical Mechanical Polishing (CMP) technology for Silicon-Carbide (SiC) single crystal, using oxidative polishing slurry. Using Potassium Permanganate, instead of Hydrogen Peroxide, we found the polishing rate was enhanced. We also found the quality of polished surface was improved; the number of scratches and pits are reduced. The steps of the atomic-layer are observed by Atomic Force Microscope (AFM) observation., text, application/pdf},
 pages = {11--13},
 title = {SiC単結晶のCMP プロセス改善に関する一検討},
 volume = {7},
 year = {2007},
 yomi = {ナカハラ, ヨシヒコ and ドイ, トシロウ}
}