{"created":"2023-05-15T15:27:49.529285+00:00","id":16787,"links":{},"metadata":{"_buckets":{"deposit":"af67bdbf-8a1f-437b-8693-562d61ffd37e"},"_deposit":{"created_by":3,"id":"16787","owners":[3],"pid":{"revision_id":0,"type":"depid","value":"16787"},"status":"published"},"_oai":{"id":"oai:sucra.repo.nii.ac.jp:00016787","sets":["95:239:639"]},"author_link":["27529","27528"],"item_120_alternative_title_1":{"attribute_name":"タイトル（別言語）","attribute_value_mlt":[{"subitem_alternative_title":"The Advanced CMP Process of SiC Single Crystal"}]},"item_120_biblio_info_8":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2007","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"13","bibliographicPageStart":"11","bibliographicVolumeNumber":"7","bibliographic_titles":[{"bibliographic_title":"埼玉大学地域共同研究センター紀要"},{"bibliographic_title":"Report of Cooperative Research Center, Saitama University","bibliographic_titleLang":"en"}]}]},"item_120_date_31":{"attribute_name":"作成日","attribute_value_mlt":[{"subitem_date_issued_datetime":"2009-03-02","subitem_date_issued_type":"Created"}]},"item_120_description_19":{"attribute_name":"概要","attribute_value_mlt":[{"subitem_description":"We developed an advanced Chemical Mechanical Polishing (CMP) technology for Silicon-Carbide (SiC) single crystal, using oxidative polishing slurry. Using Potassium Permanganate, instead of Hydrogen Peroxide, we found the polishing rate was enhanced. We also found the quality of polished surface was improved; the number of scratches and pits are reduced. The steps of the atomic-layer are observed by Atomic Force Microscope (AFM) observation.","subitem_description_type":"Other"}]},"item_120_description_29":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"subitem_description":"text","subitem_description_type":"Other"}]},"item_120_description_30":{"attribute_name":"フォーマット","attribute_value_mlt":[{"subitem_description":"application/pdf","subitem_description_type":"Other"}]},"item_120_identifier_registration":{"attribute_name":"ID登録","attribute_value_mlt":[{"subitem_identifier_reg_text":"10.24561/00016781","subitem_identifier_reg_type":"JaLC"}]},"item_120_publisher_11":{"attribute_name":"出版者名","attribute_value_mlt":[{"subitem_publisher":"埼玉大学総合研究機構地域共同研究センター産学連携推進部門"}]},"item_120_source_id_14":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"13474758","subitem_source_identifier_type":"ISSN"}]},"item_120_text_3":{"attribute_name":"著者 ローマ字","attribute_value_mlt":[{"subitem_text_value":"Nakahara, Yoshihiko"},{"subitem_text_value":"Doi, Toshiro"}]},"item_120_text_32":{"attribute_name":"アイテムID","attribute_value_mlt":[{"subitem_text_value":"KY-AA11808968-07-04"}]},"item_120_text_4":{"attribute_name":"著者 所属","attribute_value_mlt":[{"subitem_text_value":"秩父電子株式会社"},{"subitem_text_value":"埼玉大学教育学部"}]},"item_120_text_5":{"attribute_name":"著者 所属(別言語)","attribute_value_mlt":[{"subitem_text_value":"Chichibu Electronics Corporation"},{"subitem_text_value":"Faculty of Education, Saitama University"}]},"item_120_text_9":{"attribute_name":"年月次","attribute_value_mlt":[{"subitem_text_value":"2006"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"中原, 良彦"},{"creatorName":"ナカハラ, ヨシヒコ","creatorNameLang":"ja-Kana"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"土肥, 俊郎"},{"creatorName":"ドイ, トシロウ","creatorNameLang":"ja-Kana"}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2018-01-24"}],"displaytype":"detail","filename":"KY-AA11808968-07-04.pdf","filesize":[{"value":"608.3 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"KY-AA11808968-07-04.pdf","url":"https://sucra.repo.nii.ac.jp/record/16787/files/KY-AA11808968-07-04.pdf"},"version_id":"808e5b2a-811f-4c0c-a4b8-c020e5d0a041"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"SiC","subitem_subject_scheme":"Other"},{"subitem_subject":"CMP","subitem_subject_scheme":"Other"},{"subitem_subject":"oxidizing agent","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"departmental bulletin paper","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"SiC単結晶のCMP プロセス改善に関する一検討","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"SiC単結晶のCMP プロセス改善に関する一検討"}]},"item_type_id":"120","owner":"3","path":["639"],"pubdate":{"attribute_name":"公開日","attribute_value":"2009-03-03"},"publish_date":"2009-03-03","publish_status":"0","recid":"16787","relation_version_is_last":true,"title":["SiC単結晶のCMP プロセス改善に関する一検討"],"weko_creator_id":"3","weko_shared_id":-1},"updated":"2023-05-15T18:08:34.016994+00:00"}