@article{oai:sucra.repo.nii.ac.jp:00016830,
 author = {吉田, 貞史 and 矢口, 裕之 and 折原, 操},
 journal = {埼玉大学地域共同研究センター紀要, Report of Cooperative Research Center, Saitama University},
 month = {},
 note = {The improvement of the surface morphology of a-plane InN films grown by RF molecular beam epitaxy is reported. Using low-temperature (LT) InN buffer layers, we could successfully obtain InN films with a smooth surface. The full width at half maximum of the x-ray diffraction (11-20) rocking curve along the [0001] InN direction was 2200 arcsec for a-plane InN samples grown at 450°C with a LT-InN buffer layer. Thus, we could improve also the crystalline quality of a-plane InN films by using LT-InN buffer layers. We observed strong polarization anisotropy in the photoluminescence spectra of a-plane InN, which is typical of nonpolar wurtzite III-nitride films., text, application/pdf},
 pages = {48--51},
 title = {InN/InGaN 系結晶の基礎物性解明および結晶成長のための基板探索 : RF-MBE 法によるサファイアR 面基板上へのA面InN の結晶成長},
 volume = {8},
 year = {2008},
 yomi = {ヨシダ, サダフミ and ヤグチ, ヒロユキ and オリハラ, ミサオ}
}