{"created":"2023-05-15T15:27:51.364316+00:00","id":16830,"links":{},"metadata":{"_buckets":{"deposit":"ac88a0aa-15cb-4611-bef3-2f3b779c4e19"},"_deposit":{"created_by":3,"id":"16830","owners":[3],"pid":{"revision_id":0,"type":"depid","value":"16830"},"status":"published"},"_oai":{"id":"oai:sucra.repo.nii.ac.jp:00016830","sets":["95:239:640"]},"author_link":["27645","27644","16578"],"item_120_alternative_title_1":{"attribute_name":"タイトル（別言語）","attribute_value_mlt":[{"subitem_alternative_title":"RF-MBE Growth of a-plane InN on r-plane sapphire substrates"}]},"item_120_biblio_info_8":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2008","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"51","bibliographicPageStart":"48","bibliographicVolumeNumber":"8","bibliographic_titles":[{"bibliographic_title":"埼玉大学地域共同研究センター紀要"},{"bibliographic_title":"Report of Cooperative Research Center, Saitama University","bibliographic_titleLang":"en"}]}]},"item_120_date_31":{"attribute_name":"作成日","attribute_value_mlt":[{"subitem_date_issued_datetime":"2009-02-25","subitem_date_issued_type":"Created"}]},"item_120_description_19":{"attribute_name":"概要","attribute_value_mlt":[{"subitem_description":"The improvement of the surface morphology of a-plane InN films grown by RF molecular beam epitaxy is reported. Using low-temperature (LT) InN buffer layers, we could successfully obtain InN films with a smooth surface. The full width at half maximum of the x-ray diffraction (11-20) rocking curve along the [0001] InN direction was 2200 arcsec for a-plane InN samples grown at 450°C with a LT-InN buffer layer. Thus, we could improve also the crystalline quality of a-plane InN films by using LT-InN buffer layers. We observed strong polarization anisotropy in the photoluminescence spectra of a-plane InN, which is typical of nonpolar wurtzite III-nitride films.","subitem_description_type":"Other"}]},"item_120_description_29":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"subitem_description":"text","subitem_description_type":"Other"}]},"item_120_description_30":{"attribute_name":"フォーマット","attribute_value_mlt":[{"subitem_description":"application/pdf","subitem_description_type":"Other"}]},"item_120_identifier_registration":{"attribute_name":"ID登録","attribute_value_mlt":[{"subitem_identifier_reg_text":"10.24561/00016824","subitem_identifier_reg_type":"JaLC"}]},"item_120_publisher_11":{"attribute_name":"出版者名","attribute_value_mlt":[{"subitem_publisher":"埼玉大学総合研究機構地域共同研究センター産学連携推進部門"}]},"item_120_source_id_14":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"13474758","subitem_source_identifier_type":"ISSN"}]},"item_120_text_3":{"attribute_name":"著者 ローマ字","attribute_value_mlt":[{"subitem_text_value":"Yoshida, Sadafumi"},{"subitem_text_value":"Yaguchi, Hiroyuki"},{"subitem_text_value":"Orihara, Misao"}]},"item_120_text_32":{"attribute_name":"アイテムID","attribute_value_mlt":[{"subitem_text_value":"KY-AA11808968-08-16"}]},"item_120_text_4":{"attribute_name":"著者 所属","attribute_value_mlt":[{"subitem_text_value":"埼玉大学大学院理工学研究科"},{"subitem_text_value":"埼玉大学大学院理工学研究科"},{"subitem_text_value":"埼玉大学工学部"}]},"item_120_text_5":{"attribute_name":"著者 所属(別言語)","attribute_value_mlt":[{"subitem_text_value":"Graduate School of Science and Engineering, Saitama University"},{"subitem_text_value":"Graduate School of Science and Engineering, Saitama University"},{"subitem_text_value":"Faculty of Engineering, Saitama University"}]},"item_120_text_9":{"attribute_name":"年月次","attribute_value_mlt":[{"subitem_text_value":"2007"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"吉田, 貞史"},{"creatorName":"ヨシダ, サダフミ","creatorNameLang":"ja-Kana"}],"nameIdentifiers":[{"nameIdentifier":"27644","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"矢口, 裕之"},{"creatorName":"ヤグチ, ヒロユキ","creatorNameLang":"ja-Kana"}],"nameIdentifiers":[{"nameIdentifier":"16578","nameIdentifierScheme":"WEKO"},{"nameIdentifier":"sZUxYNBe","nameIdentifierScheme":"研究者総覧","nameIdentifierURI":"http://s-read.saitama-u.ac.jp/researchers/pages/researcher/sZUxYNBe"}]},{"creatorNames":[{"creatorName":"折原, 操"},{"creatorName":"オリハラ, ミサオ","creatorNameLang":"ja-Kana"}],"nameIdentifiers":[{"nameIdentifier":"27645","nameIdentifierScheme":"WEKO"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2018-01-24"}],"displaytype":"detail","filename":"KY-AA11808968-08-16.pdf","filesize":[{"value":"690.9 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"KY-AA11808968-08-16.pdf","url":"https://sucra.repo.nii.ac.jp/record/16830/files/KY-AA11808968-08-16.pdf"},"version_id":"46fa3218-f587-4ff0-9f0a-8029e111f3ac"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"InN","subitem_subject_scheme":"Other"},{"subitem_subject":"molecular beam epitaxy","subitem_subject_scheme":"Other"},{"subitem_subject":"nonpolar","subitem_subject_scheme":"Other"},{"subitem_subject":"photoluminescence","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"departmental bulletin paper","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"InN/InGaN 系結晶の基礎物性解明および結晶成長のための基板探索 : RF-MBE 法によるサファイアR 面基板上へのA面InN の結晶成長","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"InN/InGaN 系結晶の基礎物性解明および結晶成長のための基板探索 : RF-MBE 法によるサファイアR 面基板上へのA面InN の結晶成長"}]},"item_type_id":"120","owner":"3","path":["640"],"pubdate":{"attribute_name":"公開日","attribute_value":"2009-02-25"},"publish_date":"2009-02-25","publish_status":"0","recid":"16830","relation_version_is_last":true,"title":["InN/InGaN 系結晶の基礎物性解明および結晶成長のための基板探索 : RF-MBE 法によるサファイアR 面基板上へのA面InN の結晶成長"],"weko_creator_id":"3","weko_shared_id":-1},"updated":"2023-05-15T18:07:50.826597+00:00"}