@article{oai:sucra.repo.nii.ac.jp:00019207,
 author = {鎌田, 憲彦},
 journal = {CACS FORUM : 埼玉大学研究機構科学分析支援センター機関誌},
 month = {},
 note = {Crystalline defects in semiconductors form localized energy states inside the forbidden energy gap and act as nonradiative recombination (NRR) levels. They accelerate recombination of electrons in a conduction band and holes in a valence band with phonon emission, which deteriorate efficiency and reliability of optical and electronic devices. We detect such NRR levels nondestructively without any electrode by observing the intensity change of photoluminescence (PL) when a below-gap excitation (BGE) light (hνBGE＜Eg) is superposed on an above-gap excitation (AGE） light (hνAGE＞Eg). The principle and some examples of the method, Two-Wavelength Excited PL (TWEPL), are outlined here. Spectroscopy of both AGE and BGE clarifies spatial and energy distribution of NRR levels, respectively. Density, electron and hole capture rates of the NRR level are determined by the BGE density dependence of the PL intensity change. The method is applied to semiconductors, phosphors etc., leading the way of optimizing crystal growth, structure and fabrication processes of devices., text, application/pdf},
 pages = {6--17},
 title = {禁制帯内励起光を用いた非発光再結合準位の分光学的検出・評価手法《マイレビュー》},
 volume = {11},
 year = {2020},
 yomi = {カマタ, ノリヒコ}
}