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Biマイクロワイヤーアレイ素子の抵抗率及びゼーベック係数の計測<論文>
https://doi.org/10.24561/00016116
https://doi.org/10.24561/0001611677988f48-b25e-4d44-9dc8-7d5d6000e7cb
名前 / ファイル | ライセンス | アクション |
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KY-AN00095842-39-13.pdf (860.3 kB)
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Item type | 紀要論文 / Departmental Bulletin Paper(1) | |||||
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公開日 | 2008-03-21 | |||||
タイトル | ||||||
タイトル | Biマイクロワイヤーアレイ素子の抵抗率及びゼーベック係数の計測<論文> | |||||
言語 | ||||||
言語 | jpn | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | Microwire array | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | Contact resistance | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | Interlayer | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | Ion plating method | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
資源タイプ | departmental bulletin paper | |||||
ID登録 | ||||||
ID登録 | 10.24561/00016116 | |||||
ID登録タイプ | JaLC | |||||
タイトル(別言語) | ||||||
その他のタイトル | Resistivity and Seebeck coefficient measurements of a bismuth microwire array | |||||
著者 |
石川, 最朗
× 石川, 最朗× 長谷川, 靖洋 |
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著者 ローマ字 | ||||||
ISHIKAWA, Yoshiaki | ||||||
著者 ローマ字 | ||||||
HASEGAWA, Yasuhiro | ||||||
著者 所属 | ||||||
著者 所属 | ||||||
埼玉大学大学院理工学研究科環境科学・社会基盤部門 | ||||||
著者 所属(別言語) | ||||||
著者 所属(別言語) | ||||||
Graduate School of Science and Engineering, Saitama University | ||||||
書誌情報 |
埼玉大学紀要. 工学部 第1編 第1部 論文集 en : The Science and Engineering Reports of Saitama University 巻 39, p. 81-85, 発行日 2006 |
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年月次 | ||||||
2006-7 | ||||||
出版者名 | ||||||
出版者 | 埼玉大学工学部 | |||||
出版者名(別言語) | ||||||
出版者 | Faculty of Engineering, Saitama University | |||||
ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 18804446 | |||||
概要 | ||||||
内容記述タイプ | Other | |||||
内容記述 | The resistivity and Seebeck coefficient of a bismuth microwire array (wire diameter: 25μm) were successfully measured from 25 to 300 K. To eliminate the influence of the contact resistance between the wire edges of the microwire array and copper electrodes, the titanium (100 nm) /copper (500 nm) film layers were deposited as interlayer on the wire edge by ion plating method. Copper electrodes were glued by using Pb-Sn solder. The resistivity and the Seebeck coefficient at 300K were approximately 1.8μΩm and -54 μV/K, respectively. The value of the resistivity and the Seebeck coefficient were in good agreement with those of bulk polycrystalline bismuth reported previously. Thus, the effects of the contact resistance for the microwire array were almost resolved, and the chemical reaction of the Pb-Sn solder and bismuth was prevented by using the thin film layer. The technique is expected to be applicable to nanowire arrays as well. | |||||
その他の言語 | ||||||
言語 | eng | |||||
版 | ||||||
[出版社版] | ||||||
著者版フラグ | ||||||
出版タイプ | VoR | |||||
出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||
資源タイプ | ||||||
内容記述タイプ | Other | |||||
内容記述 | text | |||||
フォーマット | ||||||
内容記述タイプ | Other | |||||
内容記述 | application/pdf | |||||
作成日 | ||||||
日付 | 2008-03-19 | |||||
日付タイプ | Created | |||||
アイテムID | ||||||
KY-AN00095842-39-13 |