{"_buckets": {"deposit": "82f93160-eafb-4a60-ac63-eab4e470939d"}, "_deposit": {"created_by": 3, "id": "13651", "owners": [3], "pid": {"revision_id": 0, "type": "depid", "value": "13651"}, "status": "published"}, "_oai": {"id": "oai:sucra.repo.nii.ac.jp:00013651", "sets": ["426"]}, "author_link": ["16578"], "item_119_alternative_title_1": {"attribute_name": "タイトル（別言語）", "attribute_value_mlt": [{"subitem_alternative_title": "Epitaxial Growth of Zincblende Nitride Semiconductors(\u003cSpecial Issue\u003e Stable or Metastable: Zinc Blende and Wurtzite Structures)"}]}, "item_119_biblio_info_8": {"attribute_name": "書誌情報", "attribute_value_mlt": [{"bibliographicIssueDates": {"bibliographicIssueDate": "2008", "bibliographicIssueDateType": "Issued"}, "bibliographicIssueNumber": "4", "bibliographicPageEnd": "206", "bibliographicPageStart": "201", "bibliographicVolumeNumber": "34", "bibliographic_titles": [{"bibliographic_title": "日本結晶成長学会誌"}, {"bibliographic_title": "Journal of the Japanese Association of Crystal Growth", "bibliographic_titleLang": "en"}]}]}, "item_119_date_31": {"attribute_name": "作成日", "attribute_value_mlt": [{"subitem_date_issued_datetime": "2009-09-30", "subitem_date_issued_type": "Created"}]}, "item_119_description_19": {"attribute_name": "抄録", "attribute_value_mlt": [{"subitem_description": "有機金属気相エピタキシー法による閃亜鉛鉱構造GaNのエピタキシャル成長および分子線エピタキシー法による閃亜鉛鉱構造InNのエピタキシャル成長に関する研究について紹介する.閃亜鉛鉱構造GaNの結晶成長ではV/III比を下げ,成長温度を高くすることによって高品質な閃亜鉛鉱構造GaNが得られることがわかった.ウルツ鉱構造GaNは{111}ファセット上に成長しやすい傾向にあるため,(001)面を保ったまま成長することによりウルツ鉱構造の混入を抑制することができる.閃亜鉛鉱構造InNの結晶成長においてもV/III比を下げ,成長温度を高くすることで純度の高い高品質な閃亜鉛鉱構造InNを得ることができた.このように,高純度かつ高品質な閃亜鉛鉱構造窒化物半導体を成長するためには,低いV/III比,高い成長温度,平坦な表面という条件が重要である.\nMetalorganic vapor phase epitaxy of zincblende GaN and molecular beam epitaxy of zincblende InN are presented. High quality zincblende GaN can be grown under the condition of low V/III ratio and high growth temperature. Since wurtzite GaN tends to grow on {111} facets of zincblende GaN, it is important for preventing the mixing of wurtzite to maintain the (001) surface of zinblende during growth. High purity and high quality zincblende InN also can be grown under the condition of low V/III ratio and high growth temperature. 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