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Fabrication of C-60 nanostructures by selective growth on GaSe/MoS2 and InSe/MoS2 heterostructure substrates
https://sucra.repo.nii.ac.jp/records/13223
https://sucra.repo.nii.ac.jp/records/13223adb164dd-d49a-4a81-be91-02affe4d3495
名前 / ファイル | ライセンス | アクション |
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A1002602.pdf (905.8 kB)
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Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2008-04-15 | |||||
タイトル | ||||||
タイトル | Fabrication of C-60 nanostructures by selective growth on GaSe/MoS2 and InSe/MoS2 heterostructure substrates | |||||
言語 | ||||||
言語 | eng | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | nanostructure fabrication | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | selective growth | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | layered material | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | InSe | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | C-60 | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | atomic force microscope | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
資源タイプ | journal article | |||||
著者 |
上野, 啓司
× 上野, 啓司× Sasaki, Kentaro× Nakahara, Tomonori× 小間, 篤 |
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著者 ローマ字 | ||||||
Ueno, Keiji | ||||||
著者 ローマ字 | ||||||
Sasaki, Kentaro | ||||||
著者 ローマ字 | ||||||
Nakahara, Tomonori | ||||||
著者 ローマ字 | ||||||
Koma, Atsushi | ||||||
著者 所属 | ||||||
東京大学大学院理学系研究科(現 : 埼玉大学大学院理工学研究科物質科学部門) | ||||||
著者 所属(別言語) | ||||||
Department of Chemistry, The University of Tokyo | ||||||
著者 所属(別言語) | ||||||
Department of Chemistry, The University of Tokyo(Present : Graduate School of Science and Engineering, Saitama University) | ||||||
著者 所属(別言語) | ||||||
Department of Chemistry, The University of Tokyo | ||||||
著者 所属(別言語) | ||||||
Department of Chemistry, The University of Tokyo | ||||||
書誌情報 |
APPLIED SURFACE SCIENCE 巻 132, p. 670-675, 発行日 1998 |
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年月次 | ||||||
1998-1 | ||||||
出版者名 | ||||||
出版者 | Elsevier Science B.V. | |||||
ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 01694332 | |||||
DOI | ||||||
関連タイプ | isVersionOf | |||||
識別子タイプ | DOI | |||||
関連識別子 | info:doi/10.1016/S0169-4332(98)00136-6 | |||||
関連サイト | ||||||
内容記述タイプ | Other | |||||
内容記述 | http://www.sciencedirect.com/science/journal/01694332 | http://www.sciencedirect.com/science/journal/01694332 | |||||
抄録 | ||||||
内容記述タイプ | Abstract | |||||
内容記述 | C-60 molecules were deposited on a submonolayer InSe film which was grown on a MoS2 substrate. In the previous experiment on the growth of a C-60 thin film on a GaSe/MoS2 heterostructure, C-60 grew only on exposed MoS2 regions and never nucleated on GaSe domains at substrate temperature above 180 degrees C. In the present case, however, C-60 molecules grow only on InSe domains and do not nucleate on the exposed MoS2 when the substrate temperature is higher than 80 degrees C. Using this method, C-60 domains whose dimension is smaller than 100 nm could be fabricated on each InSe domain. The selectivity of the C-60 growth is supposed to originate not from the surface morphology of those heterostructures, but from the difference in adsorption energy and surface diffusion energy of C-60 molecules on the surfaces of three different layered materials and a C-60 film. (C) 1998 Elsevier Science B.V. All rights reserved. | |||||
版 | ||||||
[著者版] | ||||||
著者版フラグ | ||||||
出版タイプ | AM | |||||
出版タイプResource | http://purl.org/coar/version/c_ab4af688f83e57aa | |||||
資源タイプ | ||||||
内容記述タイプ | Other | |||||
内容記述 | text | |||||
フォーマット | ||||||
内容記述タイプ | Other | |||||
内容記述 | application/pdf | |||||
作成日 | ||||||
日付 | 2008-04-15 | |||||
日付タイプ | Created | |||||
アイテムID | ||||||
A1002602 |