WEKO3
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Characterization of oxide films on 4H-SiC epitaxial (000(1)over-bar) faces by high-energy-resolution photoemission spectroscopy: Comparison between wet and dry oxidation
https://sucra.repo.nii.ac.jp/records/12941
https://sucra.repo.nii.ac.jp/records/12941cb613bc4-15c2-46e3-8102-19ed3bd8af37
| 名前 / ファイル | ライセンス | アクション |
|---|---|---|
A1002272.pdf (121.5 kB)
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| Item type | 学術雑誌論文 / Journal Article(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 2007-10-17 | |||||
| タイトル | ||||||
| タイトル | Characterization of oxide films on 4H-SiC epitaxial (000(1)over-bar) faces by high-energy-resolution photoemission spectroscopy: Comparison between wet and dry oxidation | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | RAY PHOTOELECTRON-SPECTROSCOPY | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | C(000(1)OVER-BAR) FACE | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | SYNCHROTRON-RADIATION | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | INTERFACE STRUCTURES | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | SILICON-CARBIDE | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | ELLIPSOMETRY | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | STATES | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
| 資源タイプ | journal article | |||||
| 著者 |
土方, 泰斗
× 土方, 泰斗× 矢口, 裕之× 吉田, 貞史 |
|||||
| 著者 ローマ字 | ||||||
| Hijikata, Yasuto | ||||||
| 著者 ローマ字 | ||||||
| Yaguchi, Hiroyuki | ||||||
| 著者 ローマ字 | ||||||
| Yoshida, Sadafumi | ||||||
| 著者 ローマ字 | ||||||
| Takata, Yasutaka | ||||||
| 著者 ローマ字 | ||||||
| Kobayashi, Keisuke | ||||||
| 著者 ローマ字 | ||||||
| Nohira, Hiroshi | ||||||
| 著者 ローマ字 | ||||||
| Hattori, Takeo | ||||||
| 著者 所属 | ||||||
| 埼玉大学大学院理工学研究科数理電子情報部門電気電子システム領域 | ||||||
| 著者 所属 | ||||||
| 埼玉大学工学部電気電子工学科 | ||||||
| 著者 所属 | ||||||
| 埼玉大学工学部電気電子工学科 | ||||||
| 著者 所属 | ||||||
| 独立行政法人理化学研究所 | ||||||
| 著者 所属 | ||||||
| 財団法人高輝度光科学研究センター | ||||||
| 著者 所属(別言語) | ||||||
| Graduate School of Science and Engineering, Saitama University | ||||||
| 著者 所属(別言語) | ||||||
| Department of Electrical and Electronic Systems Engineering, Saitama University | ||||||
| 著者 所属(別言語) | ||||||
| Department of Electrical and Electronic Systems Engineering, Saitama University | ||||||
| 著者 所属(別言語) | ||||||
| RIKEN (The Institute of Physical and Chemical Research) | ||||||
| 著者 所属(別言語) | ||||||
| Japan Synchrotron Radiation Research Institute（JASRI） | ||||||
| 著者 所属(別言語) | ||||||
| Musashi Institute of Technology | ||||||
| 著者 所属(別言語) | ||||||
| Research Center for Silicon Nano-Science, Advanced Research Laboratories, Musashi Institute of Technology | ||||||
| 書誌情報 |
JOURNAL OF APPLIED PHYSICS 巻 100, 号 5, p. 053710-1-053710-7, 発行日 2006 |
|||||
| 年月次 | ||||||
| 2006-9 | ||||||
| 出版者名 | ||||||
| 出版者 | American Institute of Physics | |||||
| ISSN | ||||||
| 収録物識別子タイプ | ISSN | |||||
| 収録物識別子 | 00218979 | |||||
| DOI | ||||||
| 識別子タイプ | DOI | |||||
| 関連識別子 | info:doi/10.1063/1.2345471 | |||||
| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | Wet and dry oxide films-4H-SiC epitaxial (000 (1) over bar) C-face interfaces have been characterized by capacitance-voltage (C-V) measurements and soft x-ray excited photoemission spectroscopy (SX-PES) and hard x-ray excited photoemission spectroscopy (HX-PES) using synchrotron radiation. The interface state density for wet oxidation is much smaller than that for dry oxidation at any energy level. In the PES measurements, intermediate oxidation states such as Si1+ and Si3+ were observed. In addition, the areal densities of these states were found to be in a good correspondence with those of the interface states. The reasons for the good electrical characteristics of metal-oxide-semiconductor devices fabricated by wet oxidation are discussed in terms of the depth profiles of oxide films derived from the SX-PES and HX-PES results. (c) 2006 American Institute of Physics. | |||||
| 注記 | ||||||
| 内容記述タイプ | Other | |||||
| 内容記述 | copyright(c)2006 American Institute of Physics. | |||||
| 資源タイプ | ||||||
| 内容記述タイプ | Other | |||||
| 内容記述 | text | |||||
| フォーマット | ||||||
| 内容記述タイプ | Other | |||||
| 内容記述 | application/pdf | |||||
| 作成日 | ||||||
| 日付 | 2007-10-16 | |||||
| 日付タイプ | Created | |||||
| アイテムID | ||||||
| A1002272 | ||||||
