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Electrical Characteristics of Interface Defects in Oxides Grown at 1200℃ in Dry Oxygen Ambient on Silicon Carbide and Their
https://sucra.repo.nii.ac.jp/records/13096
https://sucra.repo.nii.ac.jp/records/1309690f1e50d-3848-4c94-9912-f5ccc05d7ab9
名前 / ファイル | ライセンス | アクション |
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Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2008-01-30 | |||||
タイトル | ||||||
タイトル | Electrical Characteristics of Interface Defects in Oxides Grown at 1200℃ in Dry Oxygen Ambient on Silicon Carbide and Their | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
資源タイプ | journal article | |||||
著者 |
土方, 泰斗
× 土方, 泰斗× 吉田, 貞史 |
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著者 ローマ字 | ||||||
HIJIKATA, Yasuto | ||||||
著者 ローマ字 | ||||||
YOSHIDA, Sadafumi | ||||||
著者 ローマ字 | ||||||
YOSHIKAWA, Masahito | ||||||
著者 ローマ字 | ||||||
ISHIDA, Yuuki | ||||||
著者 ローマ字 | ||||||
JIKIMOTO, Tamotsu | ||||||
著者 ローマ字 | ||||||
ITOH, Hisayoshi | ||||||
著者 ローマ字 | ||||||
OKUMURA, Hajime | ||||||
著者 ローマ字 | ||||||
TAKAHASHI, Tetsuo | ||||||
著者 ローマ字 | ||||||
TSUCHIDA, Hidekazu | ||||||
著者 所属 | ||||||
埼玉大学大学院理工学研究科数理電子情報部門 | ||||||
著者 所属 | ||||||
埼玉大学工学部 | ||||||
著者 所属(別言語) | ||||||
Graduate School of Science and Engineering, Saitama University | ||||||
著者 所属(別言語) | ||||||
Faculty of Engineering, Saitama University | ||||||
書誌情報 |
IEICE transactions on electronics 巻 E86-C, 号 4, p. 688-688, 発行日 2003 |
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年月次 | ||||||
2003-4 | ||||||
出版者名 | ||||||
出版者 | 社団法人電子情報通信学会 | |||||
ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 09168524 | |||||
注記 | ||||||
内容記述タイプ | Other | |||||
内容記述 | copyright(c)2003 IEICE許諾番号:08RB0010 http://search.ieice.org/index.html |
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版 | ||||||
[出版社版] | ||||||
著者版フラグ | ||||||
出版タイプ | VoR | |||||
出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||
資源タイプ | ||||||
内容記述タイプ | Other | |||||
内容記述 | text | |||||
フォーマット | ||||||
内容記述タイプ | Other | |||||
内容記述 | application/pdf | |||||
作成日 | ||||||
日付 | 2008-01-30 | |||||
日付タイプ | Created | |||||
アイテムID | ||||||
A1003067 |