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C, エレクトロニクス"}]}]}, "item_119_date_31": {"attribute_name": "作成日", "attribute_value_mlt": [{"subitem_date_issued_datetime": "2008-01-30", "subitem_date_issued_type": "Created"}]}, "item_119_description_17": {"attribute_name": "関連サイト", "attribute_value_mlt": [{"subitem_description": "http://search.ieice.org/index.html | http://search.ieice.org/index.html", "subitem_description_type": "Other"}]}, "item_119_description_19": {"attribute_name": "抄録", "attribute_value_mlt": [{"subitem_description": "1200℃ドライ酸化やそれに引き続いて行われる熱アニーリングが，酸化膜と4積層周期六方晶炭化ケイ素（4H-SiC）基板の界面に与える影響を調べた．n型及びp型4H-SiC基板を1200℃の乾燥酸素雰囲気中で3時間酸化して50 nmの酸化膜を作製した後，酸化膜を500℃から950℃のアルゴン雰囲気中で3時間熱アニーリングした．その酸化膜を用いて金属/酸化膜/半導体（MOS）構造を形成してC-V特性を測定し，酸化膜と4H-SiC界面の電気特性に及ぼす熱アニーリング効果を調べた．1200℃ドライ酸化膜を用いて形成した4H-SiC MOS構造のC-V特性は，電圧軸に沿って正方向へ大きくシフトした．界面には負電荷が蓄積していた．600℃で3時間の熱アニーリングを行うとC-V特性が負方向へシフトし始め，950℃ 3時間の熱アニーリングで電圧シフトが消失した．一方，p型4H-SiC 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