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Investigation of the growth mechanism of an InSe epitaxial layer on a MoS2 substrate
https://sucra.repo.nii.ac.jp/records/13224
https://sucra.repo.nii.ac.jp/records/13224b5bd2156-1ade-4746-bbc5-05a43657f81a
名前 / ファイル | ライセンス | アクション |
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A1002603.pdf (887.0 kB)
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Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2008-04-15 | |||||
タイトル | ||||||
タイトル | Investigation of the growth mechanism of an InSe epitaxial layer on a MoS2 substrate | |||||
言語 | ||||||
言語 | eng | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | STM | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | layered material | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | InSe | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | MoS2 | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | growth kinetics | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
資源タイプ | journal article | |||||
著者 |
Hayashi, Toshiyuki
× Hayashi, Toshiyuki× 上野, 啓司× 斉木, 幸一朗× 小間, 篤 |
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著者 ローマ字 | ||||||
Hayashi, Toshiyuki | ||||||
著者 ローマ字 | ||||||
Ueno, Keiji | ||||||
著者 ローマ字 | ||||||
Saiki, Koichiro | ||||||
著者 ローマ字 | ||||||
Koma, Atsushi | ||||||
著者 所属 | ||||||
著者 所属 | ||||||
東京大学大学院理学系研究科(現 : 埼玉大学大学院理工学研究科物質科学部門) | ||||||
著者 所属(別言語) | ||||||
Department of Chemistry, The University of Tokyo | ||||||
著者 所属(別言語) | ||||||
Department of Chemistry, The University of Tokyo(Present : Graduate School of Science and Engineering, Saitama University) | ||||||
著者 所属(別言語) | ||||||
Department of Complexity Science and Engineering, The University of Tokyo | ||||||
著者 所属(別言語) | ||||||
Department of Chemistry, The University of Tokyo | ||||||
書誌情報 |
JOURNAL OF CRYSTAL GROWTH 巻 219, 号 1-2, p. 115-122, 発行日 2000 |
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年月次 | ||||||
2000-10 | ||||||
出版者名 | ||||||
出版者 | Elsevier Science B.V. | |||||
ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 00220248 | |||||
DOI | ||||||
関連タイプ | isVersionOf | |||||
識別子タイプ | DOI | |||||
関連識別子 | info:doi/10.1016/S0022-0248(00)00627-8 | |||||
関連サイト | ||||||
内容記述タイプ | Other | |||||
内容記述 | http://www.sciencedirect.com/science/journal/00220248 | http://www.sciencedirect.com/science/journal/00220248 | |||||
抄録 | ||||||
内容記述タイプ | Abstract | |||||
内容記述 | Sub-monolayer films of layered semiconductor InSe were grown on MoS2 substrates by molecular beam epitaxy, and the change in their growth features with Se/In flux ratio was investigated using scanning tunneling microscope in vacuum. It was found that InSe domains grown at 340 degrees C have a hexagonal shape when the Se/In ratio is about 17. Detailed images of the hexagonal InSe domains have revealed that adjacent sides of the hexagon have different structures; one is a straight edge and the other is a disordered edge. When the Se/In ratio was decreased, the disordered edges became predominant, the straight edges disappeared, and the InSe domain became triangular. On the contrary, when the Se/In ratio was increased, InSe domains became triangular ones consisting of only straight edges. The growth mechanism of InSe domains is discussed by considering the crystal structure of InSe and the reactivity of each side with incoming atoms. It is suggested that the balance of incorporation rate of In and Se atoms determines the structure of InSe domains. (C) 2000 Elsevier Science B.V. All rights reserved. | |||||
版 | ||||||
[著者版] | ||||||
著者版フラグ | ||||||
出版タイプ | AM | |||||
出版タイプResource | http://purl.org/coar/version/c_ab4af688f83e57aa | |||||
資源タイプ | ||||||
内容記述タイプ | Other | |||||
内容記述 | text | |||||
フォーマット | ||||||
内容記述タイプ | Other | |||||
内容記述 | application/pdf | |||||
作成日 | ||||||
日付 | 2008-04-15 | |||||
日付タイプ | Created | |||||
アイテムID | ||||||
A1002603 |