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InN/InGaN 系結晶の基礎物性解明および結晶成長のための基板探索 : RF-MBE 法によるサファイアR 面基板上へのA面InN の結晶成長
https://doi.org/10.24561/00016824
https://doi.org/10.24561/00016824e9142938-ad5e-45be-9571-707a67735442
名前 / ファイル | ライセンス | アクション |
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Item type | 紀要論文 / Departmental Bulletin Paper(1) | |||||
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公開日 | 2009-02-25 | |||||
タイトル | ||||||
タイトル | InN/InGaN 系結晶の基礎物性解明および結晶成長のための基板探索 : RF-MBE 法によるサファイアR 面基板上へのA面InN の結晶成長 | |||||
言語 | ||||||
言語 | jpn | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | InN | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | molecular beam epitaxy | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | nonpolar | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | photoluminescence | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
資源タイプ | departmental bulletin paper | |||||
ID登録 | ||||||
ID登録 | 10.24561/00016824 | |||||
ID登録タイプ | JaLC | |||||
タイトル(別言語) | ||||||
その他のタイトル | RF-MBE Growth of a-plane InN on r-plane sapphire substrates | |||||
著者 |
吉田, 貞史
× 吉田, 貞史× 矢口, 裕之× 折原, 操 |
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著者 ローマ字 | ||||||
Yoshida, Sadafumi | ||||||
著者 ローマ字 | ||||||
Yaguchi, Hiroyuki | ||||||
著者 ローマ字 | ||||||
Orihara, Misao | ||||||
著者 所属 | ||||||
埼玉大学大学院理工学研究科 | ||||||
著者 所属 | ||||||
埼玉大学大学院理工学研究科 | ||||||
著者 所属 | ||||||
埼玉大学工学部 | ||||||
著者 所属(別言語) | ||||||
Graduate School of Science and Engineering, Saitama University | ||||||
著者 所属(別言語) | ||||||
Graduate School of Science and Engineering, Saitama University | ||||||
著者 所属(別言語) | ||||||
Faculty of Engineering, Saitama University | ||||||
書誌情報 |
埼玉大学地域共同研究センター紀要 en : Report of Cooperative Research Center, Saitama University 巻 8, p. 48-51, 発行日 2008 |
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年月次 | ||||||
2007 | ||||||
出版者名 | ||||||
出版者 | 埼玉大学総合研究機構地域共同研究センター産学連携推進部門 | |||||
ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 13474758 | |||||
概要 | ||||||
内容記述タイプ | Other | |||||
内容記述 | The improvement of the surface morphology of a-plane InN films grown by RF molecular beam epitaxy is reported. Using low-temperature (LT) InN buffer layers, we could successfully obtain InN films with a smooth surface. The full width at half maximum of the x-ray diffraction (11-20) rocking curve along the [0001] InN direction was 2200 arcsec for a-plane InN samples grown at 450°C with a LT-InN buffer layer. Thus, we could improve also the crystalline quality of a-plane InN films by using LT-InN buffer layers. We observed strong polarization anisotropy in the photoluminescence spectra of a-plane InN, which is typical of nonpolar wurtzite III-nitride films. | |||||
資源タイプ | ||||||
内容記述タイプ | Other | |||||
内容記述 | text | |||||
フォーマット | ||||||
内容記述タイプ | Other | |||||
内容記述 | application/pdf | |||||
作成日 | ||||||
日付 | 2009-02-25 | |||||
日付タイプ | Created | |||||
アイテムID | ||||||
KY-AA11808968-08-16 |