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RF-MBE法を用いた六方晶および立方晶InNのエピタキシャル成長
https://doi.org/10.24561/00016696
https://doi.org/10.24561/0001669617897f71-d36d-4433-87fa-3f6272d0999c
名前 / ファイル | ライセンス | アクション |
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KY-AA11808968-04-15.pdf (197.9 kB)
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Item type | 紀要論文 / Departmental Bulletin Paper(1) | |||||
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公開日 | 2009-05-14 | |||||
タイトル | ||||||
タイトル | RF-MBE法を用いた六方晶および立方晶InNのエピタキシャル成長 | |||||
言語 | ||||||
言語 | jpn | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | InN | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | hexagonal | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | cubic | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | RF-MBE | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | 3C-SiC | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | GaN | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | x-ray diffraction | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | photoluminescence | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
資源タイプ | departmental bulletin paper | |||||
ID登録 | ||||||
ID登録 | 10.24561/00016696 | |||||
ID登録タイプ | JaLC | |||||
タイトル(別言語) | ||||||
その他のタイトル | Epitaxial Growth of hexagonal and cubic InN using RF-MBE | |||||
著者 |
吉田, 貞史
× 吉田, 貞史× 矢口, 裕之× 土方, 泰斗× 折原, 操 |
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著者 ローマ字 | ||||||
Yoshida, Sadafumi | ||||||
著者 ローマ字 | ||||||
Yaguchi, Hiroyuki | ||||||
著者 ローマ字 | ||||||
Hijikata, Yasuto | ||||||
著者 ローマ字 | ||||||
Orihara, Misao | ||||||
著者 所属 | ||||||
埼玉大学工学部電気電子システム工学科 | ||||||
著者 所属 | ||||||
埼玉大学工学部電気電子システム工学科 | ||||||
著者 所属 | ||||||
埼玉大学工学部電気電子システム工学科 | ||||||
著者 所属 | ||||||
埼玉大学工学部電気電子システム工学科 | ||||||
著者 所属(別言語) | ||||||
Department of Electrical and Electronic Systems, Faculty of Engineering, Saitama University | ||||||
著者 所属(別言語) | ||||||
Department of Electrical and Electronic Systems, Faculty of Engineering, Saitama University | ||||||
著者 所属(別言語) | ||||||
Department of Electrical and Electronic Systems, Faculty of Engineering, Saitama University | ||||||
著者 所属(別言語) | ||||||
Department of Electrical and Electronic Systems, Faculty of Engineering, Saitama University | ||||||
書誌情報 |
埼玉大学地域共同研究センター紀要 en : Report of Cooperative Research Center, Saitama Univerity 巻 4, p. 61-64, 発行日 2004 |
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年月次 | ||||||
2003 | ||||||
出版者名 | ||||||
出版者 | 埼玉大学地域共同研究センター | |||||
ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 13474758 | |||||
概要 | ||||||
内容記述タイプ | Other | |||||
内容記述 | We have grown InN films on 3C-SiC (001) substrates with and without cubic GaN underlayers by RF-MBE. It was found that, in the case of direct growth on 3C-SiC (001), hexagonal InN grows with the crystal orientation as hexagonal InN [1-100]//3C-SiC [110], while, in the case of the growth on cubic GaN underlayers, cubic InN grows with the crystal orientation as cubic InN [110]//cubic GaN [110]. Photoluminescence emissions from the cubic and hexagonal InN films were clearly observed at around 0.7 eV. | |||||
資源タイプ | ||||||
内容記述タイプ | Other | |||||
内容記述 | text | |||||
フォーマット | ||||||
内容記述タイプ | Other | |||||
内容記述 | application/pdf | |||||
作成日 | ||||||
日付 | 2009-06-17 | |||||
日付タイプ | Created | |||||
アイテムID | ||||||
KY-AA11808968-04-15 |